Tapeout maps every measurement to its design, physical, test, and manufacturing context — then identifies which assumptions systematically failed to predict silicon.
RTL modules, synthesized instances, physical coordinates, timing endpoints, scan chains, test numbers, monitor IDs, die coordinates — all disconnected across teams and tools.
Post-silicon learnings take months to reach pre-silicon teams — if they arrive at all. The same margin errors resurface across tape-outs.
STA predictions vs. actual silicon timing. DFT coverage vs. real defect escapes. Power models vs. measured power. Nobody bridges these systematically across vendors.
Ingest signoff, DFT, tester, and monitor data for each tapeout revision. STA reports, Liberty libraries, DEF/LEF, STDF, wafer maps, shmoo plots.
Connect silicon measurements to the paths, cells, blocks, physical regions, and design assumptions that produced them. Build the identity graph across every naming system.
Quantify the gap between predicted and measured behavior. Rank the conditions responsible — cell family, Vt class, physical location, routing congestion, PVT corner, lot, wafer position.
Generate reviewed changes to margins, constraints, test content, and instrumentation before the next tapeout. Derates, guardbands, ECO candidates, monitor placement recommendations.
Every data source uses different identifiers. Tapeout builds a versioned graph that links them all — so you can navigate from a failing die back to the exact design assumptions that caused the failure.
Tapeout produces specific, ranked recommendations that engineers can review and apply before the next tape-out.
Cell-family-specific derate adjustments backed by measured silicon margin.
Updated PVT assumptions derived from actual voltage, temperature, and process sensitivity.
Ranked explanations: which variables explain the prediction-to-silicon gap.
Paths and regions that need margin adjustment, power-grid investigation, or cell-class changes.
New ATPG targets, observation-point recommendations, and monitor placement based on real escapes.
Wafer-level and layout-level visualization of where predictions diverge from silicon.
PrimeTime or Tempus. TestMAX or Tessent. Any foundry, any tester, any STDF output. No tool lock-in.
Works with whatever instrumentation already exists — ring oscillators, path monitors, PVT sensors, ATPG patterns.
Semiconductor-grade security. Your design data never leaves your network. Air-gap compatible.
Every recommendation shows the variables, the evidence, and the affected design objects. No black-box neural network verdicts.
We’re working with design partners at leading chip companies. If your team spends weeks correlating post-silicon measurements with pre-silicon predictions, let’s talk.